2sa1417 / 2sc3647 no.2006-1/7 features ? adoption of fbet, mbit processes ? high breakdown voltage and large current capacity ? fast switching speed ? ultrasmall size making it easy to provide high-density small-sized hybrid ics speci cations ( ) : 2sa1417 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)100 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)3 a collector dissipation p c 500 mw when mounted on ceramic substrate (250mm 2 0.8mm) 1.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7007b-004 ordering number : en2006d 90512 tkim/22006ea msim/o3103tn (kt)/71598ha (kt)/3277ki/n255mw, ts sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sa1417s-td-e 2sa1417t-td-e 2sc3647s-td-e 2sc3647t-td-e ac lot no. cc lot no. 2sc3647 2sa1417 rank rank 2 3 1 2sc3647 2 3 1 2sa1417 2sa1417/2sc3647 pnp / npn epitaxial planar silicon transistor high-voltage switching applications
2sa1417 / 2sc3647 no.2006-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)100v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)5v, i c =(--)100ma 100* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)100ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (25)16 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)100ma (--0.22)0.13 (--0.6)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)1a, i b =(--)100ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)120 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)100 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (80)80 ns storage time t stg (750)1000 ns fall time t f (40)50 ns * : the 2sa1417 / 2s3647 are classi ed by 100ma h fe as follws : rank r s t h fe 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sa1417s-td-e pcp 1,000pcs./reel pb free 2sa1417t-td-e pcp 1,000pcs./reel 2sc3647s-td-e pcp 1,000pcs./reel 2sc3647t-td-e pcp 1,000pcs./reel v r r b v cc =50v v be = --5v + + 50 input output r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =0.7a for pnp, the polarit y is reversed.
2sa1417 / 2sc3647 no.2006-3/7 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a itr03542 0--2 -- 1 -- 4 --3 --5 2 14 35 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 0.4 0.8 1.2 1.6 2.0 0 itr03543 --20ma --30ma --10ma --5ma --3ma --2ma --1ma i b =0ma 2sa1417 2sc3647 i b =0ma 20ma 30ma 50ma 40ma 10ma 5ma 3ma 2ma 1ma --40ma itr03549 itr03548 itr03546 -- 5 -- 7 -- 7 -- 3 -- 2 -- 0.01 -- 0.1 -- 5 -- 7 -- 3 -- 2 -- 3 -- 2 -- 1.0 -- 0.8 -- 0.4 0 -- 1.2 -- 1.6 -- 2.4 -- 2.0 0.8 0.4 0 1.2 1.6 2.4 2.0 100 1000 5 7 3 2 5 7 3 100 1000 5 7 3 2 5 7 3 57 73 2 0.01 0.1 57 3 23 2 1.0 -- 0.6 -- 0.8 0 -- 0.4 -- 0.2 -- 1.0 -- 1.2 0.6 0.8 0 0.4 0.2 1.0 1.2 itr03547 2sa1417 v ce = --5v 2sc3647 v ce =5v 2sa1417 v ce = --5v 2sc3647 v ce =5v --25 c 25 c ta=75 c --25 c 25 c ta=75 c - -25 c 25 c ta=75 c --25 c 25 c ta=75 c 0 --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.6 0.4 0.8 1.0 0 10 20 30 40 50 0 itr03545 itr03544 -- 40 -- 30 -- 50 -- 10 -- 20 0 2sc3647 i b =0ma 2sa1417 - -6ma --5ma --4ma --3ma --2ma --1ma i b =0ma 0.5ma 2.5ma 3.0ma 3.5ma 4.0ma 2.0ma 1.5ma 1.0ma h fe -- i c h fe -- i c i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 4.5ma 5.0ma
2sa1417 / 2sc3647 no.2006-4/7 itr03551 itr03550 2 0.01 57 73 0.1 257 323 1.0 10 100 2 3 2 3 5 7 2 1.0 57 73 2 2 10 57 3 100 10 100 2 3 5 7 3 5 7 2sa1417 2sc3647 2sa1417 2sc3647 2sa1417 / 2sc3647 v ce =10v 2sa1417 / 2sc3647 f=1mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf for pnp minus sign is omitted. for pnp minus sign is omitted. f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz it10757 0 0.2 0.4 0.5 0.6 0.8 1.8 1.6 1.4 1.5 1.2 1.0 0 20 80 100 60 40 160 140 120 2sa1417 / 2sc3647 itr03554 -- 1.0 3 -- 10 5 7 5 7 3 2 0.01 3 0.1 5 7 7 5 2 3 1.0 5 5 7 2 3 2 7 -- 0.01 -- 0.1 57 3 2 -- 1.0 57 3 23 2 1.0 3 10 5 7 5 7 3 2 7 0.01 0.1 57 3 2 1.0 57 3 23 2 7 1.0 53 22 itr03555 itr03556 7 10 53 27 100 5 i cp =3a i c =2a 1ms 10ms 100ms dc operation 25 c ta= --25 c 75 c 2sc3647 i c / i b =10 2sa1417 i c / i b =10 25 c ta= --25 c 75 c 2 -- 0.01 -- 0.1 57 73 2 -- 1.0 57 323 2 0.01 0.1 57 73 2 1.0 57 323 -- 1000 -- 100 -- 10 2 3 5 7 2 3 5 7 itr03552 100 10 2 3 5 7 1000 2 3 5 7 itr03553 2sc3647 i c / i b =10 2sa1417 i c / i b =10 --25 c 25 c ta=75 c --25 c 25 c tc=75 c 2sa1417 / 2sc3647 v be (sat) -- i c v be (sat) -- i c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv a s o for pnp minus sign is omitted. ta=25 c single pulse mounted on a ceramic board (250mm 2 ? 0.8mm) p c -- ta collector-to-emitter voltage, v ce -- v collector current, i c -- a mounted on a ceramic boa rd (250mm 2 ? 0.8mm) ambient temperature, ta -- c collector dissipation, p c -- w infinite heat si nk
2sa1417 / 2sc3647 no.2006-5/7 embossed taping speci cation 2sa1417s-td-e, 2sa1417t-td-e, 2sc3647s-td-e, 2sc3647t-td-e
2sa1417 / 2sc3647 no.2006-6/7 outline drawing land pattern example 2sa1417s-td-e, 2sa1417t-td-e, 2sc3647s-td-e, 2sc3647t-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sa1417 / 2sc3647 ps no.2006-7/7 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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